Brand new and genuine item in original manufacturer's packing
Form factor: M.2 (2280)
Interface: PCIe Gen 3.0 x 4, NVMe 1.3
Sequential Read: Up to 3500 MB/s
Sequential Write: Up to 2300 MB/s
The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by the latest V-NAND technology and firmware optimization. It maximizes the potential of NVMe bandwidth for unbeatable computing. In capacities up to2TB, with reliability of up to 1,200 TBW.
The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimized firmware, a proven Phoenix controller, and Intelligent Turbo Write boosts
The next advancement in NVMe SSD. The 970 EVO Plus fits up to 2TB onto the compact M.2 (2280) form factor, greatly expanding storage capacity and saving space for other components. Samsung †s innovative technology empowers you with the capacity to do more and accomplish more.
Achieve a new level of drive confidence. Samsung’s advanced nickel-coated controller and heat spreader on the 970 EVO Plus enable superior heat dissipation. The Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimize performance drops.
Advanced drive management made simple. The Samsung Magician software will help you keep an eye on your drive. A suite of user-friendly tools helps keep your drive up to date, monitor drive health and speed, and even boost performance.
Random Read (4KB, QD32) Up to 250,000 IOPS * Performance may vary based on system hardware & configuration
Random Write (4KB, QD32) Up to 550,000 IOPS * Performance may vary based on system hardware & configuration
Random Read (4KB, QD1) Up to 17,000 IOPS * Performance may vary based on system hardware & configuration
Random Write (4KB, QD1) Up to 60,000 IOPS * Performance may vary based on system hardware & configuration
Controller: Samsung Phoenix Controller
Storage Memory: Samsung V-NAND 3-bit MLC
Dimensions:80.15 x 22.15 x 2.38 (mm)
Weight: Max 8.0 g
Cache Memory: Samsung 512MB Low Power DDR4 SDRAM
Auto Garbage Collection Algorithm
Encryption Support: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
WWN Support: Not support
Device Sleep Mode Support: Yes
Average Power Consumption: Average: 5 W *Maximum: 8 W (Burst mode)
Actual power consumption may vary depending on system hardware & configuration)
Power Consumption: Max. 30 mW
Reliability(MTBF): 1.5 Million Hours Reliability
Operating Temperature: 0 - 70 ℃Operating
Shock1,500G & 0.5 ms (Half sine)
Three year limited warranty
The "Speed" is specified by manufacturer by using its own optimal testing environment. (However, actual performance will be varied with different environment of individual device.)
Actual usable memory capacity may vary 10% of stated capacity